FQT7N10LTF

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-261-4, TO-261AA
MOSFET N-CH 100V 1.7A SOT-223
Date Sheet

在庫數 656

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Number of Pins：3
Weight：188mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：1.7A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Power Dissipation (Max)：2W Tc
Turn Off Delay Time：17 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：QFET®
Published：2017
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Resistance：350mOhm
Voltage - Rated DC：100V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：1.7A
JESD-30 Code：R-PDSO-G4
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
Case Connection：DRAIN
Turn On Delay Time：9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：350m Ω @ 850mA, 10V
Input Capacitance (Ciss) (Max) @ Vds：290pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6nC @ 5V
Rise Time：100ns
Vgs (Max)：±20V
Fall Time (Typ)：50 ns
Continuous Drain Current (ID)：1.7A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：6.8A
Avalanche Energy Rating (Eas)：50 mJ
Max Junction Temperature (Tj)：150°C
Height：1.8mm
Length：6.5mm
Width：3.56mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 656

小計金額 $0.00000

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