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IRF630
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- In a Tube of 50, IRF630 N-Channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220 STMicroelectronics
Date Sheet
在庫數 10
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：12 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Number of Pins：3
- Weight：4.535924g
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：9A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：75W Tc
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
- Operating Temperature：-65°C~150°C TJ
- Packaging：Tube
- Series：MESH OVERLAY™ II
- JESD-609 Code：e3
- Part Status：ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Resistance：400mOhm
- Terminal Finish：Matte Tin (Sn)
- Additional Feature：AVALANCHE RATED
- Voltage - Rated DC：200V
- Current Rating：9A
- Base Part Number：IRF6
- Lead Pitch：2.54mm
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：75W
- Turn On Delay Time：10 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：400m Ω @ 4.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：700pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：45nC @ 10V
- Rise Time：15ns
- Vgs (Max)：±20V
- Reverse Recovery Time：170 ns
- Continuous Drain Current (ID)：9A
- Threshold Voltage：3V
- JEDEC-95 Code：TO-220AB
- Gate to Source Voltage (Vgs)：20V
- Drain Current-Max (Abs) (ID)：9A
- Drain to Source Breakdown Voltage：200V
- Dual Supply Voltage：200V
- Nominal Vgs：3 V
- Feedback Cap-Max (Crss)：50 pF
- Height：15.75mm
- Length：10.4mm
- Width：4.6mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 10
小計金額 $0.00000
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