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FDMS86101DC
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerTDFN
- N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 100V, 60A, 7.5mO
Date Sheet
在庫數 147791
- 1+: $4.23110
- 10+: $3.99160
- 100+: $3.76566
- 500+: $3.55251
- 1000+: $3.35143
小計金額 $4.23110
仕様 よくある質問
- Factory Lead Time:4 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Number of Pins:8
- Weight:90mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:14.5A Ta 60A Tc
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Number of Elements:1
- Power Dissipation (Max):3.2W Ta 125W Tc
- Turn Off Delay Time:25 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:Dual Cool™, PowerTrench®
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Resistance:7.5MOhm
- Terminal Finish:Tin (Sn)
- Terminal Form:FLAT
- JESD-30 Code:R-PDSO-F5
- Number of Channels:1
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:125W
- Case Connection:DRAIN
- Turn On Delay Time:14 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:7.5m Ω @ 14.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:3135pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:44nC @ 10V
- Rise Time:8.2ns
- Vgs (Max):±20V
- Fall Time (Typ):5.5 ns
- Continuous Drain Current (ID):14.5A
- JEDEC-95 Code:MO-240AA
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):60A
- Drain to Source Breakdown Voltage:100V
- Pulsed Drain Current-Max (IDM):200A
- Max Junction Temperature (Tj):150°C
- Height:1.05mm
- Length:5.1mm
- Width:5.85mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 147791
- 1+: $4.23110
- 10+: $3.99160
- 100+: $3.76566
- 500+: $3.55251
- 1000+: $3.35143
小計金額 $4.23110
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