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FQT13N06LTF

在庫數 12000

  • 1+: $0.39185
  • 10+: $0.36967
  • 100+: $0.34874
  • 500+: $0.32900
  • 1000+: $0.31038

小計金額 $0.39185

仕様 よくある質問
  • Factory Lead Time:21 Weeks
  • Contact Plating:Tin
  • Mount:Surface Mount
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Number of Pins:3
  • Weight:188mg
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:2.8A Tc
  • Drive Voltage (Max Rds On, Min Rds On):5V 10V
  • Number of Elements:1
  • Power Dissipation (Max):2.1W Tc
  • Turn Off Delay Time:20 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:2.5V @ 250μA
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tape & Reel (TR)
  • Series:QFET®
  • Published:2001
  • JESD-609 Code:e3
  • Pbfree Code:yes
  • Part Status:ACTIVE (Last Updated: 4 days ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:4
  • ECCN Code:EAR99
  • Resistance:110mOhm
  • Voltage - Rated DC:60V
  • Terminal Position:DUAL
  • Terminal Form:GULL WING
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Current Rating:2.8A
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • JESD-30 Code:R-PDSO-G4
  • Qualification Status:Not Qualified
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:2.1W
  • Case Connection:DRAIN
  • Turn On Delay Time:8 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:110m Ω @ 1.4A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:350pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:6.4nC @ 5V
  • Rise Time:90ns
  • Vgs (Max):±20V
  • Fall Time (Typ):40 ns
  • Continuous Drain Current (ID):2.8A
  • Threshold Voltage:2.5V
  • Gate to Source Voltage (Vgs):20V
  • Drain to Source Breakdown Voltage:60V
  • Height:1.6mm
  • Length:6.5mm
  • Width:3.56mm
  • REACH SVHC:No SVHC
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 12000

  • 1+: $0.39185
  • 10+: $0.36967
  • 100+: $0.34874
  • 500+: $0.32900
  • 1000+: $0.31038

小計金額 $0.39185

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