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STS6NF20V
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- 8-SOIC (0.154, 3.90mm Width)
- MOSFET N-Ch 20 Volt 6 Amp
Date Sheet
在庫數 360000
- 1+: $0.91960
- 10+: $0.86755
- 100+: $0.81844
- 500+: $0.77212
- 1000+: $0.72841
小計金額 $0.91960
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time:12 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154, 3.90mm Width)
- Number of Pins:8
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:6A Tc
- Drive Voltage (Max Rds On, Min Rds On):1.95V 4.5V
- Number of Elements:1
- Power Dissipation (Max):2.5W Tc
- Turn Off Delay Time:27 ns
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Series:STripFET™ II
- JESD-609 Code:e4
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:8
- ECCN Code:EAR99
- Terminal Finish:Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:STS6N
- Pin Count:8
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.5W
- Turn On Delay Time:7 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:40m Ω @ 3A, 4.5V
- Vgs(th) (Max) @ Id:600mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:460pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:11.5nC @ 4.5V
- Rise Time:33ns
- Vgs (Max):±12V
- Fall Time (Typ):10 ns
- Continuous Drain Current (ID):6A
- Threshold Voltage:600mV
- Gate to Source Voltage (Vgs):12V
- Drain Current-Max (Abs) (ID):6A
- Drain-source On Resistance-Max:0.045Ohm
- Drain to Source Breakdown Voltage:20V
- Pulsed Drain Current-Max (IDM):24A
- Height:1.25mm
- Length:5mm
- Width:4mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 360000
- 1+: $0.91960
- 10+: $0.86755
- 100+: $0.81844
- 500+: $0.77212
- 1000+: $0.72841
小計金額 $0.91960
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