FDS6575

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET P-CH 20V 10A 8-SO
Date Sheet

在庫數 100000

1+： $3.00718
10+： $2.83696
100+： $2.67638
500+： $2.52488
1000+： $2.38197

小計金額 $3.00718

仕様よくある質問

Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：10A Ta
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：196 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：1.5V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2001
JESD-609 Code：e4
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：13MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：-20V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-10A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：16 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：13m Ω @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：4951pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：74nC @ 4.5V
Rise Time：9ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±8V
Fall Time (Typ)：78 ns
Continuous Drain Current (ID)：10A
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：-20V
Nominal Vgs：-600 mV
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 100000

1+： $3.00718
10+： $2.83696
100+： $2.67638
500+： $2.52488
1000+： $2.38197

小計金額 $3.00718

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FDS6575