STU4N52K3

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET N-Ch 525V 2.1 Ohm 2.5A SuperMESH 3
Date Sheet

在庫數 1352

1+： $1.58552
10+： $1.49577
100+： $1.41110
500+： $1.33123
1000+： $1.25588

小計金額 $1.58552

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：12 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：45W Tc
Turn Off Delay Time：21 ns
Operating Temperature：150°C TJ
Packaging：Tube
Series：SuperMESH3™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：ULTRA-LOW RESISTANCE
Peak Reflow Temperature (Cel)：260
Base Part Number：STU4N
Pin Count：3
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：45W
Turn On Delay Time：8 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：2.6 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id：4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：334pF @ 100V
Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
Rise Time：7ns
Vgs (Max)：±30V
Fall Time (Typ)：14 ns
Continuous Drain Current (ID)：2.5A
Threshold Voltage：3.75V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：525V
Pulsed Drain Current-Max (IDM)：10A
Avalanche Energy Rating (Eas)：110 mJ
Height：15.75mm
Length：10.4mm
Width：4.6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1352

1+： $1.58552
10+： $1.49577
100+： $1.41110
500+： $1.33123
1000+： $1.25588

小計金額 $1.58552

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STU4N52K3