FDD86326

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Shielded Gate PowerTrench® MOSFET, N-Channel, 80 V, 37 A, 23 mO
Date Sheet

在庫數 79999

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8A Ta 37A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：3.1W Ta 62W Tc
Turn Off Delay Time：13.4 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2010
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：62W
Case Connection：DRAIN
Turn On Delay Time：7.6 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：23m Ω @ 8A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1035pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
Rise Time：3ns
Vgs (Max)：±20V
Fall Time (Typ)：2.9 ns
Continuous Drain Current (ID)：42A
Threshold Voltage：3.1V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：8A
Drain to Source Breakdown Voltage：80V
Pulsed Drain Current-Max (IDM)：40A
Nominal Vgs：3.1 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 79999

小計金額 $0.00000

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