STB11NM60T4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 650V 11A D2PAK
Date Sheet

在庫數 2699

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：160W Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：11A Tc
Turn Off Delay Time：6 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-65°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™
JESD-609 Code：e3
Part Status：NRND (Last Updated: 7 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：450MOhm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：600V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：11A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB11N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：160W
Turn On Delay Time：20 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：450m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Rise Time：20ns
Drain to Source Voltage (Vdss)：650V
Vgs (Max)：±30V
Fall Time (Typ)：11 ns
Continuous Drain Current (ID)：11A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：44A
Height：4.6mm
Length：10.75mm
Width：10.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2699

小計金額 $0.00000

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STB11NM60T4