FDD3682

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 100V 32A D-PAK
Date Sheet

在庫數 79999

1+： $1.13824
10+： $1.07381
100+： $1.01303
500+： $0.95569
1000+： $0.90159

小計金額 $1.13824

仕様よくある質問

Lifecycle Status：ACTIVE, NOT REC (Last Updated: 2 hours ago)
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5.5A Ta 32A Tc
Turn Off Delay Time：24 ns
Power Dissipation (Max)：95W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Series：PowerTrench®
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~175°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：36MOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：100V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：32A
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：95W
Case Connection：DRAIN
Turn On Delay Time：9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：36m Ω @ 32A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V
Rise Time：46ns
Vgs (Max)：±20V
Fall Time (Typ)：26 ns
Continuous Drain Current (ID)：32A
Threshold Voltage：4V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：5.5A
Drain to Source Breakdown Voltage：100V
Dual Supply Voltage：100V
Avalanche Energy Rating (Eas)：55 mJ
Nominal Vgs：4 V
Width：6.22mm
Length：6.73mm
Height：2.39mm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 79999

1+： $1.13824
10+： $1.07381
100+： $1.01303
500+： $0.95569
1000+： $0.90159

小計金額 $1.13824

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