FDMC7664

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerWDFN
MOSFET N-Chan 30/20V PowerTrench
Date Sheet

在庫數 52800

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：23 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Number of Pins：8
Weight：165.33333mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：18.8A Ta 24A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.3W Ta 45W Tc
Turn Off Delay Time：37 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature：ULTRA-LOW RESISTANCE
Terminal Position：DUAL
JESD-30 Code：S-PDSO-N5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.3W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.2m Ω @ 18.8A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：4865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：76nC @ 10V
Rise Time：7ns
Vgs (Max)：±20V
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：24A
Threshold Voltage：1.9V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0042Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：60A
Nominal Vgs：1.9 V
Height：750μm
Length：3.3mm
Width：3.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 52800

小計金額 $0.00000

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FDMC7664