FQP19N20

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET N-CH 200V 19.4A TO-220
Date Sheet

在庫數 9000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3
Number of Pins：3
Weight：1.8g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：19.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：140W Tc
Turn Off Delay Time：55 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
Published：2000
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：Through Hole
ECCN Code：EAR99
Resistance：150mOhm
Terminal Finish：Tin (Sn)
Voltage - Rated DC：200V
Current Rating：19.4A
Lead Pitch：2.54mm
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：140W
Turn On Delay Time：20 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：150m Ω @ 9.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
Rise Time：190ns
Vgs (Max)：±30V
Fall Time (Typ)：80 ns
Reverse Recovery Time：140 ns
Continuous Drain Current (ID)：19.4A
Threshold Voltage：5V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：200V
Pulsed Drain Current-Max (IDM)：78A
Dual Supply Voltage：200V
Avalanche Energy Rating (Eas)：250 mJ
Nominal Vgs：5 V
Height：15.38mm
Length：10.2mm
Width：4.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 9000

小計金額 $0.00000

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FQP19N20