FQD19N10TM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Trans MOSFET N-CH 100V 15.6A 3-Pin(2 Tab) DPAK T/R
Date Sheet

在庫數 17

1+： $1.70312
10+： $1.60671
100+： $1.51577
500+： $1.42997
1000+： $1.34903

小計金額 $1.70312

仕様よくある質問

Factory Lead Time：4 Weeks
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type：Surface Mount
Mount：Surface Mount
Contact Plating：Tin
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：15.6A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Power Dissipation (Max)：2.5W Ta 50W Tc
Turn Off Delay Time：20 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Number of Elements：1
Series：QFET®
Published：2000
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：100MOhm
Voltage - Rated DC：100V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：15.6A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：7.5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：100m Ω @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds：780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
Rise Time：150ns
Vgs (Max)：±25V
Fall Time (Typ)：65 ns
Continuous Drain Current (ID)：15.6A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：62.4A
Avalanche Energy Rating (Eas)：220 mJ
Width：6.1mm
Length：6.6mm
Height：2.3mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 17

1+： $1.70312
10+： $1.60671
100+： $1.51577
500+： $1.42997
1000+： $1.34903

小計金額 $1.70312

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