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FDMC8462
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerTDFN
- MOSFET N-CH 40V 14A POWER33
Date Sheet
在庫數 2309
- 1+: $1.76984
- 10+: $1.66966
- 100+: $1.57515
- 500+: $1.48599
- 1000+: $1.40188
小計金額 $1.76984
仕様 よくある質問
- Factory Lead Time:43 Weeks
- Contact Plating:Gold
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Number of Pins:8
- Weight:32.13mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:14A Ta 20A Tc
- Drive Voltage (Max Rds On, Min Rds On):4.5V 10V
- Number of Elements:1
- Power Dissipation (Max):2W Ta 41W Tc
- Turn Off Delay Time:27 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:3V @ 250μA
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- JESD-609 Code:e4
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 11 hours ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Resistance:5.8MOhm
- Terminal Finish:Nickel/Palladium (Ni/Pd)
- Terminal Position:DUAL
- JESD-30 Code:S-PDSO-N5
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2W
- Case Connection:DRAIN
- Turn On Delay Time:12 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:5.8m Ω @ 13.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:2660pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs:43nC @ 10V
- Rise Time:4ns
- Vgs (Max):±20V
- Fall Time (Typ):3 ns
- Continuous Drain Current (ID):14A
- Threshold Voltage:2V
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):64A
- Drain to Source Breakdown Voltage:40V
- Pulsed Drain Current-Max (IDM):50A
- Height:1.05mm
- Length:3.3mm
- Width:3.3mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 2309
- 1+: $1.76984
- 10+: $1.66966
- 100+: $1.57515
- 500+: $1.48599
- 1000+: $1.40188
小計金額 $1.76984
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