NTD110N02RT4

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 24V 12.5A DPAK
Date Sheet

在庫數 1450

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12.5A Ta 110A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.5W Ta 110W Tc
Turn Off Delay Time：27 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Published：2009
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.29.00.95
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：235
Reach Compliance Code：not_compliant
Current Rating：110A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.88W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：3440pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：28nC @ 4.5V
Rise Time：39ns
Vgs (Max)：±20V
Fall Time (Typ)：21 ns
Continuous Drain Current (ID)：110A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：12.5A
Drain-source On Resistance-Max：0.0062Ohm
Drain to Source Breakdown Voltage：24V
Avalanche Energy Rating (Eas)：120 mJ
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 1450

小計金額 $0.00000

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NTD110N02RT4