NTD23N03RT4

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 25V 3.8A DPAK
Date Sheet

在庫數 12500

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：3.8A Ta 17.1A Tc
Drive Voltage (Max Rds On, Min Rds On)：4V 5V
Number of Elements：1
Power Dissipation (Max)：1.14W Ta 22.3W Tc
Turn Off Delay Time：9.9 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2008
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.29.00.95
Voltage - Rated DC：25V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：240
Current Rating：23A
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：22.3W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：45m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds：225pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：3.76nC @ 4.5V
Rise Time：14.9ns
Vgs (Max)：±20V
Continuous Drain Current (ID)：17.1A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：3.8A
Drain-source On Resistance-Max：0.06Ohm
Drain to Source Breakdown Voltage：25V
Pulsed Drain Current-Max (IDM)：40A
REACH SVHC：not_compliant
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 12500

小計金額 $0.00000

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NTD23N03RT4