NTD60N02RT4

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET 25V 62A N-Channel
Date Sheet

在庫數 800

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：OBSOLETE (Last Updated: 2 days ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：4
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：1.25W Ta 58W Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Current - Continuous Drain (Id) @ 25℃：8.5A Ta 32A Tc
Turn Off Delay Time：19 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e0
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin/Lead (Sn80Pb20)
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：240
Reach Compliance Code：not_compliant
Current Rating：60A
Time@Peak Reflow Temperature-Max (s)：30
Pin Count：4
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.87W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1330pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：14nC @ 4.5V
Rise Time：33ns
Vgs (Max)：±20V
Fall Time (Typ)：33 ns
Continuous Drain Current (ID)：32A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0105Ohm
Drain to Source Breakdown Voltage：25V
Avalanche Energy Rating (Eas)：60 mJ
RoHS Status：Non-RoHS Compliant
Lead Free：Lead Free

在庫數 800

小計金額 $0.00000

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NTD60N02RT4