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NTD3055-150T4
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 60V 9A DPAK
Date Sheet
在庫數 19
小計金額 $0.00000
仕様 よくある質問
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:9A Ta
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):1.5W Ta 28.8W Tj
- Turn Off Delay Time:12.2 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Published:2007
- JESD-609 Code:e0
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- Voltage - Rated DC:60V
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):240
- Reach Compliance Code:not_compliant
- Current Rating:9A
- Time@Peak Reflow Temperature-Max (s):30
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:28.8W
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:150m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:280pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
- Rise Time:37.1ns
- Vgs (Max):±20V
- Fall Time (Typ):23 ns
- Continuous Drain Current (ID):9A
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):9A
- Drain-source On Resistance-Max:0.15Ohm
- Drain to Source Breakdown Voltage:60V
- Pulsed Drain Current-Max (IDM):27A
- Avalanche Energy Rating (Eas):30 mJ
- RoHS Status:Non-RoHS Compliant
- Lead Free:Contains Lead
在庫數 19
小計金額 $0.00000
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