FDB8896-F085

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 30V 19A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 670

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Turn Off Delay Time：58 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Current - Continuous Drain (Id) @ 25℃：19A Ta 93A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：80W Tc
Series：Automotive, AEC-Q101, PowerTrench®
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LAST SHIPMENTS (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：80W
Case Connection：DRAIN
Turn On Delay Time：9 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：5.7m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2525pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：67nC @ 10V
Rise Time：102ns
Vgs (Max)：±20V
Fall Time (Typ)：44 ns
Continuous Drain Current (ID)：93A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：19A
Drain-source On Resistance-Max：0.0068Ohm
Drain to Source Breakdown Voltage：30V
Avalanche Energy Rating (Eas)：74 mJ
RoHS Status：RoHS Compliant
Radiation Hardening：No

在庫數 670

小計金額 $0.00000

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FDB8896-F085