STP12NM50FP

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
Trans MOSFET N-CH 500V 12A 3-Pin(3 Tab) TO-220FP Tube
Date Sheet

在庫數 20

1+： $2.72142
10+： $2.56738
100+： $2.42206
500+： $2.28496
1000+： $2.15562

小計金額 $2.72142

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
Factory Lead Time：16 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：35W Tc
Operating Temperature：-65°C~150°C TJ
Packaging：Tube
Series：MDmesh™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Resistance：350mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：AVALANCHE RATED
Voltage - Rated DC：500V
Current Rating：12A
Base Part Number：STP12
Pin Count：3
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：35W
Case Connection：ISOLATED
Turn On Delay Time：20 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：350m Ω @ 6A, 10V
Vgs(th) (Max) @ Id：5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：39nC @ 10V
Rise Time：10ns
Vgs (Max)：±30V
Continuous Drain Current (ID)：12A
Threshold Voltage：4V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：500V
Pulsed Drain Current-Max (IDM)：48A
Avalanche Energy Rating (Eas)：400 mJ
Max Junction Temperature (Tj)：150°C
Height：20mm
Length：10.4mm
Width：4.6mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20

1+： $2.72142
10+： $2.56738
100+： $2.42206
500+： $2.28496
1000+： $2.15562

小計金額 $2.72142

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STP12NM50FP