FDC3535

ON Semiconductor
Transistors - FETs, MOSFETs - Single
SOT-23-6 Thin, TSOT-23-6
MOSFET MOSFET; -80V P-Chan PowerTrench
Date Sheet

在庫數 25000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Turn Off Delay Time：23 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Current - Continuous Drain (Id) @ 25℃：2.1A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.6W Ta
Series：PowerTrench®
Published：2017
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Terminal Finish：TIN
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Turn On Delay Time：6.5 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：183m Ω @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds：880pF @ 40V
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Rise Time：3.1ns
Drain to Source Voltage (Vdss)：80V
Vgs (Max)：±20V
Fall Time (Typ)：2.9 ns
Continuous Drain Current (ID)：-2.1A
Threshold Voltage：-1.6V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：-80V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：-1.6 V
Feedback Cap-Max (Crss)：40 pF
Width：1.7mm
Height：1.1mm
Length：3mm
RoHS Status：ROHS3 Compliant
REACH SVHC：No SVHC
Radiation Hardening：No
Lead Free：Lead Free

在庫數 25000

小計金額 $0.00000

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FDC3535