STN2NF10

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-261-4, TO-261AA
Trans MOSFET N-CH 100V 2.4A 4-Pin(3 Tab) SOT-223 T/R
Date Sheet

在庫數 20000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：12 Weeks
Package / Case：TO-261-4, TO-261AA
Mount：Surface Mount
Mounting Type：Surface Mount
Number of Pins：4
Weight：4.535924g
Transistor Element Material：SILICON
Power Dissipation (Max)：3.3W Tc
Current - Continuous Drain (Id) @ 25℃：2.4A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Turn Off Delay Time：20 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~150°C TJ
Series：STripFET™ II
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：4
ECCN Code：EAR99
Resistance：260mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：100V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：2A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STN2N
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：3.3W
Turn On Delay Time：6 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：260m Ω @ 1.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
Rise Time：10ns
Vgs (Max)：±20V
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：2A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：2A
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：8A
Avalanche Energy Rating (Eas)：300 mJ
Height：1.8mm
Length：6.5mm
Width：3.5mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 20000

小計金額 $0.00000

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