FDB3632

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ON SEMICONDUCTOR - FDB3632 - Power MOSFET, N Channel, 100 V, 80 A, 0.009 ohm, TO-263AB, Surface Mount
Date Sheet

在庫數 100

1+： $4.73310
10+： $4.46519
100+： $4.21244
500+： $3.97400
1000+： $3.74906

小計金額 $4.73310

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：12A Ta 80A Tc
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：310W Tc
Turn Off Delay Time：96 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2013
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：9MOhm
Voltage - Rated DC：100V
Terminal Form：GULL WING
Current Rating：44A
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：310W
Case Connection：DRAIN
Turn On Delay Time：30 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：6000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：110nC @ 10V
Rise Time：39ns
Vgs (Max)：±20V
Fall Time (Typ)：46 ns
Continuous Drain Current (ID)：80A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：100V
Dual Supply Voltage：100V
Max Junction Temperature (Tj)：175°C
Nominal Vgs：4 V
Height：5.08mm
Length：10.67mm
Width：9.65mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 100

1+： $4.73310
10+： $4.46519
100+： $4.21244
500+： $3.97400
1000+： $3.74906

小計金額 $4.73310

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FDB3632