FDMC86102LZ

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerWDFN
MOSFET 100V N-Channel PowerTrench MOSFET
Date Sheet

在庫數 190

1+： $2.13431
10+： $2.01350
100+： $1.89953
500+： $1.79201
1000+： $1.69058

小計金額 $2.13431

仕様よくある質問

Factory Lead Time：6 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Contact Plating：Gold, Silver
Number of Pins：8
Weight：165.33333mg
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：2.3W Ta 41W Tc
Current - Continuous Drain (Id) @ 25℃：7A Ta 18A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Turn Off Delay Time：19 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.2V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2017
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Resistance：24MOhm
Terminal Finish：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature：LOGIC LEVEL COMPATIBLE
Terminal Position：DUAL
Peak Reflow Temperature (Cel)：260
Time@Peak Reflow Temperature-Max (s)：30
JESD-30 Code：S-PDSO-N5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：41W
Case Connection：DRAIN
Turn On Delay Time：7.1 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：24m Ω @ 6.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1290pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Rise Time：2.3ns
Vgs (Max)：±20V
Fall Time (Typ)：2.5 ns
Continuous Drain Current (ID)：7A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：7A
Drain to Source Breakdown Voltage：100V
Pulsed Drain Current-Max (IDM)：30A
Nominal Vgs：1.6 V
Length：3.3mm
Height：750μm
Width：3.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 190

1+： $2.13431
10+： $2.01350
100+： $1.89953
500+： $1.79201
1000+： $1.69058

小計金額 $2.13431

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FDMC86102LZ