STD5N20LT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET Transistor, N Channel, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V RoHS Compliant: Yes
Date Sheet

在庫數 5000

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V
Number of Elements：1
Power Dissipation (Max)：33W Tc
Turn Off Delay Time：14 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：STripFET™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：700mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Voltage - Rated DC：200V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：5A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD5N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：33W
Case Connection：DRAIN
Turn On Delay Time：11.5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：700m Ω @ 2.5A, 5V
Vgs(th) (Max) @ Id：2.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds：242pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：6nC @ 5V
Rise Time：21.5ns
Vgs (Max)：±20V
Fall Time (Typ)：15.5 ns
Continuous Drain Current (ID)：5A
Threshold Voltage：2.5V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：5A
Drain to Source Breakdown Voltage：200V
Pulsed Drain Current-Max (IDM)：20A
Dual Supply Voltage：200V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：2.5 V
Height：2.63mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 5000

小計金額 $0.00000

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