FDC638P

ON Semiconductor
Transistors - FETs, MOSFETs - Single
SOT-23-6 Thin, TSOT-23-6
ON SEMICONDUCTOR - FDC638P - MOSFET Transistor, P Channel, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -800 mV
Date Sheet

在庫數 15000

1+： $0.84828
10+： $0.80027
100+： $0.75497
500+： $0.71223
1000+： $0.67192

小計金額 $0.84828

仕様よくある質問

Factory Lead Time：10 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Contact Plating：Tin
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：1.6W Ta
Turn Off Delay Time：33 ns
Current - Continuous Drain (Id) @ 25℃：4.5A Ta
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：1.5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2001
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
ECCN Code：EAR99
Resistance：48MOhm
Voltage - Rated DC：-20V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-4.5A
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Turn On Delay Time：12 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：48m Ω @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1160pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：14nC @ 4.5V
Rise Time：9ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±8V
Fall Time (Typ)：9 ns
Continuous Drain Current (ID)：-4.5A
Threshold Voltage：-800mV
Gate to Source Voltage (Vgs)：8V
Drain to Source Breakdown Voltage：-20V
Dual Supply Voltage：-20V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：-800 mV
Height：1.1mm
Length：3mm
Width：1.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 15000

1+： $0.84828
10+： $0.80027
100+： $0.75497
500+： $0.71223
1000+： $0.67192

小計金額 $0.84828

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FDC638P