FCB20N60FTM

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 600V 20A D2PAK
Date Sheet

在庫數 11122

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：4 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：20A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：208W Tc
Turn Off Delay Time：230 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：SuperFET™
Published：2008
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 3 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：190mOhm
Voltage - Rated DC：600V
Terminal Form：GULL WING
Current Rating：20A
Base Part Number：FCB20N60
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：208W
Case Connection：DRAIN
Turn On Delay Time：62 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：190m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds：3080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：98nC @ 10V
Rise Time：140ns
Vgs (Max)：±30V
Fall Time (Typ)：65 ns
Continuous Drain Current (ID)：20A
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：60A
Avalanche Energy Rating (Eas)：690 mJ
Height：4.83mm
Length：10.67mm
Width：9.65mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 11122

小計金額 $0.00000

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FCB20N60FTM