画像はあくまで参考です。

在庫數 4222

  • 1+: $2.80342
  • 10+: $2.64473
  • 100+: $2.49503
  • 500+: $2.35380
  • 1000+: $2.22057

小計金額 $2.80342

仕様 よくある質問
  • Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time:12 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:7A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):125W Tc
  • Turn Off Delay Time:43 ns
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tube
  • Series:SuperMESH™
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Matte Tin (Sn)
  • Voltage - Rated DC:600V
  • Current Rating:7A
  • Base Part Number:STP9N
  • Pin Count:3
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:125W
  • Turn On Delay Time:19 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:950m Ω @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds:1110pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
  • Rise Time:17ns
  • Vgs (Max):±30V
  • Fall Time (Typ):15 ns
  • Continuous Drain Current (ID):3.5A
  • Threshold Voltage:3.75V
  • JEDEC-95 Code:TO-220AB
  • Gate to Source Voltage (Vgs):30V
  • Drain Current-Max (Abs) (ID):7A
  • Drain-source On Resistance-Max:0.95Ohm
  • Drain to Source Breakdown Voltage:600V
  • Pulsed Drain Current-Max (IDM):28A
  • Height:9.15mm
  • Length:10.4mm
  • Width:4.6mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 4222

  • 1+: $2.80342
  • 10+: $2.64473
  • 100+: $2.49503
  • 500+: $2.35380
  • 1000+: $2.22057

小計金額 $2.80342

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