FDS3572

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
ON SEMICONDUCTOR - FDS3572 - N CHANNEL MOSFET, 80V, 8.9A, SOIC
Date Sheet

在庫數 89999

1+： $1.91536
10+： $1.80694
100+： $1.70466
500+： $1.60817
1000+： $1.51714

小計金額 $1.91536

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：12 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：8.9A Ta
Drive Voltage (Max Rds On, Min Rds On)：6V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：31 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2003
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：16MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：80V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：8.9A
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：13 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：16m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1990pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：41nC @ 10V
Rise Time：14ns
Vgs (Max)：±20V
Fall Time (Typ)：13 ns
Continuous Drain Current (ID)：8.9A
Threshold Voltage：4V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：80V
Nominal Vgs：4 V
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 89999

1+： $1.91536
10+： $1.80694
100+： $1.70466
500+： $1.60817
1000+： $1.51714

小計金額 $1.91536

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FDS3572