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STP14NF10
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STMicroelectronics
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Transistors - FETs, MOSFETs - Single
- TO-220-3
- In a Pack of 5, N-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 STMicroelectronics STP14NF10
Date Sheet
在庫數 100
- 1+： $1.61219
- 10+： $1.52093
- 100+： $1.43484
- 500+： $1.35363
- 1000+： $1.27701
小計金額 $1.61219
仕様 よくある質問
- Factory Lead Time：12 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：15A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：60W Tc
- Turn Off Delay Time：32 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tube
- Series：STripFET™ II
- JESD-609 Code：e3
- Part Status：ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Resistance：130mOhm
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：100V
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Current Rating：15A
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：STP14N
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：60W
- Case Connection：DRAIN
- Turn On Delay Time：16 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：130m Ω @ 7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：460pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Rise Time：25ns
- Vgs (Max)：±20V
- Fall Time (Typ)：8 ns
- Continuous Drain Current (ID)：15A
- JEDEC-95 Code：TO-220AB
- Gate to Source Voltage (Vgs)：20V
- Drain to Source Breakdown Voltage：100V
- Pulsed Drain Current-Max (IDM)：60A
- Avalanche Energy Rating (Eas)：70 mJ
- Height：9.15mm
- Length：10.4mm
- Width：4.6mm
- REACH SVHC：not_compliant
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
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