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STU5N62K3

在庫數 108

  • 1+: $2.09844
  • 10+: $1.97966
  • 100+: $1.86761
  • 500+: $1.76189
  • 1000+: $1.66216

小計金額 $2.09844

仕様 よくある質問
  • Factory Lead Time:12 Weeks
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins:3
  • Transistor Element Material:SILICON
  • Current - Continuous Drain (Id) @ 25℃:4.2A Tc
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Number of Elements:1
  • Power Dissipation (Max):70W Tc
  • Turn Off Delay Time:40 ns
  • Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4.5V @ 50μA
  • Operating Temperature:-55°C~150°C TJ
  • Packaging:Tube
  • Series:SuperMESH3™
  • JESD-609 Code:e3
  • Part Status:ACTIVE (Last Updated: 7 months ago)
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Resistance:1.6Ohm
  • Terminal Finish:Matte Tin (Sn) - annealed
  • Additional Feature:ULTRA LOW-ON RESISTANCE
  • Peak Reflow Temperature (Cel):260
  • Base Part Number:STU5N
  • Element Configuration:Single
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:70W
  • Turn On Delay Time:12 ns
  • FET Type:N-Channel
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:1.6 Ω @ 2.1A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds:680pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
  • Rise Time:8ns
  • Vgs (Max):±30V
  • Fall Time (Typ):21 ns
  • Continuous Drain Current (ID):4.2A
  • Threshold Voltage:3.75V
  • Gate to Source Voltage (Vgs):30V
  • Drain to Source Breakdown Voltage:620V
  • Pulsed Drain Current-Max (IDM):16.8A
  • Avalanche Energy Rating (Eas):120 mJ
  • Height:6.9mm
  • Length:6.6mm
  • Width:2.4mm
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 108

  • 1+: $2.09844
  • 10+: $1.97966
  • 100+: $1.86761
  • 500+: $1.76189
  • 1000+: $1.66216

小計金額 $2.09844

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