FQPF8N60C

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 600V 7.5A TO-220F
Date Sheet

在庫數 2860

1+： $2.32358
10+： $2.19206
100+： $2.06798
500+： $1.95092
1000+： $1.84049

小計金額 $2.32358

仕様よくある質問

Lifecycle Status：ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Weight：2.27g
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：48W Tc
Turn Off Delay Time：81 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：QFET®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Not For New Designs
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
Termination：Through Hole
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Additional Feature：FAST SWITCHING
Voltage - Rated DC：600V
Current Rating：7.5A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：48W
Case Connection：ISOLATED
Turn On Delay Time：16.5 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.2 Ω @ 3.75A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1255pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：36nC @ 10V
Rise Time：60.5ns
Vgs (Max)：±30V
Fall Time (Typ)：64.5 ns
Continuous Drain Current (ID)：7.5A
Threshold Voltage：4V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：600V
Dual Supply Voltage：600V
Nominal Vgs：4 V
Height：9.19mm
Length：10.16mm
Width：4.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 2860

1+： $2.32358
10+： $2.19206
100+： $2.06798
500+： $1.95092
1000+： $1.84049

小計金額 $2.32358

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