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FCP16N60N
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- MOSFET N-CH 600V 16A TO-220-3
Date Sheet
在庫數 10000
- 1+: $8.04755
- 10+: $7.59202
- 100+: $7.16229
- 500+: $6.75687
- 1000+: $6.37441
小計金額 $8.04755
仕様 よくある質問
- Factory Lead Time:12 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Number of Pins:3
- Weight:1.8g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:16A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):134.4W Tc
- Turn Off Delay Time:60.3 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:SupreMOS™
- Published:2009
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Resistance:199mOhm
- Terminal Finish:Tin (Sn)
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:134.4W
- Turn On Delay Time:15.8 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:199m Ω @ 8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:2170pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs:52.3nC @ 10V
- Rise Time:15.5ns
- Vgs (Max):±30V
- Fall Time (Typ):20.2 ns
- Continuous Drain Current (ID):16A
- Threshold Voltage:2V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:600V
- Pulsed Drain Current-Max (IDM):48A
- Nominal Vgs:2 V
- Height:9.4mm
- Length:10.67mm
- Width:4.83mm
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 10000
- 1+: $8.04755
- 10+: $7.59202
- 100+: $7.16229
- 500+: $6.75687
- 1000+: $6.37441
小計金額 $8.04755
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