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FDA33N25
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-3P-3, SC-65-3
- MOSFET N-CH 250V 33A TO-3PN
Date Sheet
在庫數 43000
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：6 Weeks
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Number of Pins：3
- Weight：6.401g
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：33A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：245W Tc
- Turn Off Delay Time：77 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：UniFET™
- Published：2014
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：245W
- Turn On Delay Time：33 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：94m Ω @ 16.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：2200pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：46.8nC @ 10V
- Rise Time：142ns
- Vgs (Max)：±30V
- Fall Time (Typ)：68 ns
- Continuous Drain Current (ID)：33A
- Gate to Source Voltage (Vgs)：30V
- Drain-source On Resistance-Max：0.094Ohm
- Drain to Source Breakdown Voltage：250V
- Height：20.1mm
- Length：16.2mm
- Width：5mm
- RoHS Status：ROHS3 Compliant
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