STF11NM80

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-220-3 Full Pack
MOSFET N-CH 800V 11A TO220FP
Date Sheet

在庫數 10577

1+： $5.63309
10+： $5.31423
100+： $5.01343
500+： $4.72965
1000+： $4.46193

小計金額 $5.63309

仕様よくある質問

Factory Lead Time：16 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：11A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：35W Tc
Turn Off Delay Time：46 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
Operating Temperature：-65°C~150°C TJ
Packaging：Tube
Series：MDmesh™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Resistance：400mOhm
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：ULTRA-LOW RESISTANCE
Voltage - Rated DC：800V
Current Rating：11A
Base Part Number：STF11
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：35W
Case Connection：ISOLATED
Turn On Delay Time：22 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：400m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：43.6nC @ 10V
Rise Time：17ns
Vgs (Max)：±30V
Fall Time (Typ)：15 ns
Continuous Drain Current (ID)：11A
Threshold Voltage：4V
JEDEC-95 Code：TO-220AB
Gate to Source Voltage (Vgs)：30V
Drain to Source Breakdown Voltage：800V
Pulsed Drain Current-Max (IDM)：44A
Avalanche Energy Rating (Eas)：400 mJ
Height：9.3mm
Length：10.4mm
Width：4.6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 10577

1+： $5.63309
10+： $5.31423
100+： $5.01343
500+： $4.72965
1000+： $4.46193

小計金額 $5.63309

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STF11NM80