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FDB075N15A
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- N CH MOSFET, POWERTRENCH, 150V, 130A, D2PAK - More Details
Date Sheet
在庫數 551
- 1+: $6.32525
- 10+: $5.96721
- 100+: $5.62945
- 500+: $5.31080
- 1000+: $5.01019
小計金額 $6.32525
仕様 よくある質問
- Factory Lead Time:12 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins:3
- Weight:1.31247g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:130A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):333W Tc
- Turn Off Delay Time:62 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:4V @ 250μA
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2013
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Additional Feature:ULTRA-LOW RESISTANCE
- Terminal Form:GULL WING
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:333W
- Case Connection:DRAIN
- Turn On Delay Time:28 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:7.5m Ω @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds:7350pF @ 75V
- Gate Charge (Qg) (Max) @ Vgs:100nC @ 10V
- Rise Time:37ns
- Vgs (Max):±20V
- Fall Time (Typ):21 ns
- Continuous Drain Current (ID):130A
- Gate to Source Voltage (Vgs):20V
- Drain-source On Resistance-Max:0.0075Ohm
- Drain to Source Breakdown Voltage:150V
- Pulsed Drain Current-Max (IDM):522A
- Avalanche Energy Rating (Eas):588 mJ
- Height:4.83mm
- Length:10.67mm
- Width:9.65mm
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 551
- 1+: $6.32525
- 10+: $5.96721
- 100+: $5.62945
- 500+: $5.31080
- 1000+: $5.01019
小計金額 $6.32525
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