FDB082N15A

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
N CH MOSFET, POWERTRENCH, 150V, 105A, D2PAK - More Details
Date Sheet

在庫數 79999

1+： $10.12378
10+： $9.55074
100+： $9.01013
500+： $8.50012
1000+： $8.01898

小計金額 $10.12378

仕様よくある質問

Factory Lead Time：8 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Weight：1.31247g
Transistor Element Material：SILICON
Number of Elements：1
Power Dissipation (Max)：294W Tc
Turn Off Delay Time：61 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
Current - Continuous Drain (Id) @ 25℃：117A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 4 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：8.2MOhm
Terminal Finish：Tin (Sn)
Additional Feature：ULTRA-LOW RESISTANCE
Terminal Form：GULL WING
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：231W
Case Connection：DRAIN
Turn On Delay Time：22 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.2m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds：6040pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：84nC @ 10V
Rise Time：58ns
Vgs (Max)：±20V
Fall Time (Typ)：26 ns
Continuous Drain Current (ID)：105A
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：150V
Pulsed Drain Current-Max (IDM)：420A
Avalanche Energy Rating (Eas)：542 mJ
Width：9.65mm
Height：4.83mm
Length：10.67mm
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 79999

1+： $10.12378
10+： $9.55074
100+： $9.01013
500+： $8.50012
1000+： $8.01898

小計金額 $10.12378

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FDB082N15A