STD60NF55LT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-Ch 55 Volt 60 Amp
Date Sheet

在庫數 12500

1+： $1.58311
10+： $1.49350
100+： $1.40896
500+： $1.32921
1000+： $1.25397

小計金額 $1.58311

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：60A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：100W Tc
Turn Off Delay Time：80 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：STripFET™ II
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn) - annealed
Additional Feature：LOW THRESHOLD
Voltage - Rated DC：55V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：60A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD60N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：110W
Case Connection：DRAIN
Turn On Delay Time：30 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：56nC @ 5V
Rise Time：180ns
Vgs (Max)：±15V
Fall Time (Typ)：35 ns
Continuous Drain Current (ID)：30A
Threshold Voltage：2V
JEDEC-95 Code：TO-252AA
Gate to Source Voltage (Vgs)：15V
Drain to Source Breakdown Voltage：55V
Pulsed Drain Current-Max (IDM)：240A
Dual Supply Voltage：55V
Avalanche Energy Rating (Eas)：400 mJ
Nominal Vgs：2 V
Height：2.4mm
Length：6.6mm
Width：6.2mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 12500

1+： $1.58311
10+： $1.49350
100+： $1.40896
500+： $1.32921
1000+： $1.25397

小計金額 $1.58311

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STD60NF55LT4