STB85NF55LT4

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 55V 80A D2PAK
Date Sheet

在庫數 1000

1+： $2.58705
10+： $2.44061
100+： $2.30246
500+： $2.17214
1000+： $2.04918

小計金額 $2.58705

仕様よくある質問

Factory Lead Time：12 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Power Dissipation (Max)：300W Tc
Turn Off Delay Time：70 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Current - Continuous Drain (Id) @ 25℃：80A Tc
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Number of Elements：1
Series：STripFET™ II
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
JESD-609 Code：e3
Part Status：ACTIVE (Last Updated: 6 months ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：8mOhm
Terminal Finish：Matte Tin (Sn)
Additional Feature：LOGIC LEVEL COMPATIBLE
Voltage - Rated DC：55V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Current Rating：80A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STB85N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：300W
Case Connection：DRAIN
Turn On Delay Time：35 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds：4050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：110nC @ 5V
Rise Time：165ns
Vgs (Max)：±15V
Fall Time (Typ)：55 ns
Continuous Drain Current (ID)：80A
Gate to Source Voltage (Vgs)：15V
Drain to Source Breakdown Voltage：55V
Avalanche Energy Rating (Eas)：980 mJ
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 1000

1+： $2.58705
10+： $2.44061
100+： $2.30246
500+： $2.17214
1000+： $2.04918

小計金額 $2.58705

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STB85NF55LT4