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FDMC86102
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerTDFN
- MOSFET N-CH 100V 8-MLP
Date Sheet
在庫數 2000
- 1+: $2.64657
- 10+: $2.49677
- 100+: $2.35544
- 500+: $2.22211
- 1000+: $2.09633
小計金額 $2.64657
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time:40 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Number of Pins:8
- Weight:32.13mg
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:7A Ta 20A Tc
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Number of Elements:1
- Power Dissipation (Max):2.3W Ta 41W Tc
- Turn Off Delay Time:14 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- JESD-609 Code:e4
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Resistance:24MOhm
- Terminal Finish:Nickel/Palladium (Ni/Pd)
- Terminal Position:DUAL
- JESD-30 Code:S-PDSO-N5
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:2.3W
- Case Connection:DRAIN
- Turn On Delay Time:8 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:24m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:965pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
- Rise Time:4ns
- Vgs (Max):±20V
- Fall Time (Typ):4 ns
- Continuous Drain Current (ID):20A
- Threshold Voltage:3.1V
- JEDEC-95 Code:MO-240BA
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):7A
- Drain to Source Breakdown Voltage:100V
- Pulsed Drain Current-Max (IDM):30A
- Avalanche Energy Rating (Eas):72 mJ
- Nominal Vgs:3.1 V
- Height:950μm
- Length:3.4mm
- Width:3.4mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 2000
- 1+: $2.64657
- 10+: $2.49677
- 100+: $2.35544
- 500+: $2.22211
- 1000+: $2.09633
小計金額 $2.64657
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