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FDMS86104
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- 8-PowerTDFN
- MOSFET 100V N-Channel PowerTrench MOSFET
Date Sheet
在庫數 494220
- 1+: $3.67027
- 10+: $3.46251
- 100+: $3.26652
- 500+: $3.08163
- 1000+: $2.90719
小計金額 $3.67027
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time:8 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Number of Pins:8
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:7A Ta 16A Tc
- Drive Voltage (Max Rds On, Min Rds On):6V 10V
- Number of Elements:1
- Power Dissipation (Max):2.5W Ta 73W Tc
- Turn Off Delay Time:14.3 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:PowerTrench®
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:5
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Terminal Position:DUAL
- Terminal Form:FLAT
- JESD-30 Code:R-PDSO-F5
- Voltage:100V
- Element Configuration:Single
- Current:16A
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:73W
- Case Connection:DRAIN
- Turn On Delay Time:8 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:24m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:923pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
- Rise Time:3.5ns
- Vgs (Max):±20V
- Fall Time (Typ):3.2 ns
- Continuous Drain Current (ID):16A
- Threshold Voltage:2.9V
- JEDEC-95 Code:MO-240AA
- Gate to Source Voltage (Vgs):20V
- Drain-source On Resistance-Max:0.024Ohm
- Drain to Source Breakdown Voltage:100V
- Avalanche Energy Rating (Eas):96 mJ
- Height:1.05mm
- Length:5mm
- Width:6mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 494220
- 1+: $3.67027
- 10+: $3.46251
- 100+: $3.26652
- 500+: $3.08163
- 1000+: $2.90719
小計金額 $3.67027
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