STB120N4LF6

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Trans MOSFET N-CH 40V 80A 3-Pin(2 Tab) D2PAK T/R
Date Sheet

在庫數 63259

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：20 Weeks
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type：Surface Mount
Mount：Surface Mount
Number of Pins：4
Transistor Element Material：SILICON
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Turn Off Delay Time：125 ns
Power Dissipation (Max)：110W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：5V 10V
Current - Continuous Drain (Id) @ 25℃：80A Tc
Series：Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Packaging：Tape & Reel (TR)
Operating Temperature：-55°C~175°C TJ
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Resistance：4MOhm
Terminal Finish：Matte Tin (Sn) - annealed
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：245
Base Part Number：STB120N
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：110W
Case Connection：DRAIN
Turn On Delay Time：15 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：4m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds：4300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：80nC @ 10V
Rise Time：95ns
Vgs (Max)：±20V
Fall Time (Typ)：45 ns
Continuous Drain Current (ID)：80A
Threshold Voltage：1V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：40V
Width：10.4mm
Length：10.75mm
Height：4.6mm
RoHS Status：ROHS3 Compliant
Radiation Hardening：No
REACH SVHC：No SVHC
Lead Free：Lead Free

在庫數 63259

小計金額 $0.00000

類似スペック製品

STB120N4LF6 STMicroelectronics
見積かごへ在庫數 63259
IRL1404ZSTRLPBF Infineon Technologies
見積かごへ在庫數 16000
STB155N3LH6 STMicroelectronics
見積かごへ在庫數 10000
STB120N4F6 STMicroelectronics
見積かごへ在庫數 377

Phone

STB120N4LF6