FDMS7676

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerTDFN
MOSFET 30/20V N-Chan PowerTrench
Date Sheet

在庫數 17665

1+： $1.64872
10+： $1.55540
100+： $1.46735
500+： $1.38430
1000+： $1.30594

小計金額 $1.64872

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：18 Weeks
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Number of Pins：8
Weight：68.1mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：16A Ta 28A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta 48W Tc
Turn Off Delay Time：25 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Position：DUAL
Terminal Form：FLAT
JESD-30 Code：R-PDSO-F5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Case Connection：DRAIN
Turn On Delay Time：13 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：5.5m Ω @ 19A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：2960pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
Rise Time：5ns
Vgs (Max)：±20V
Fall Time (Typ)：4 ns
Continuous Drain Current (ID)：28A
Threshold Voltage：2V
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：76A
Drain-source On Resistance-Max：0.0055Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：90A
Avalanche Energy Rating (Eas)：72 mJ
Nominal Vgs：2 V
Height：1.05mm
Length：5mm
Width：6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant

在庫數 17665

1+： $1.64872
10+： $1.55540
100+： $1.46735
500+： $1.38430
1000+： $1.30594

小計金額 $1.64872

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FDMS7676