NTB65N02RT4G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 25V 7.6A D2PAK
Date Sheet

在庫數 2172

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7.6A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.04W Ta 62.5W Tc
Turn Off Delay Time：14 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2007
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LAST SHIPMENTS (Last Updated: 6 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：24V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：65A
Time@Peak Reflow Temperature-Max (s)：40
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.86W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8.2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1330pF @ 20V
Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
Rise Time：53ns
Drain to Source Voltage (Vdss)：25V
Vgs (Max)：±20V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：7.6A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.0105Ohm
Drain to Source Breakdown Voltage：24V
Pulsed Drain Current-Max (IDM)：160A
Avalanche Energy Rating (Eas)：60 mJ
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 2172

小計金額 $0.00000

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