NTD4815NHT4G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 30V 6.9A DPAK
Date Sheet

在庫數 6000

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：4
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：6.9A Ta 35A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 11.5V
Number of Elements：1
Power Dissipation (Max)：1.26W Ta 32.6W Tc
Turn Off Delay Time：18.4 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Published：2008
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LAST SHIPMENTS (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.92W
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：15m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds：845pF @ 12V
Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 4.5V
Rise Time：17.6ns
Vgs (Max)：±20V
Fall Time (Typ)：17.6 ns
Continuous Drain Current (ID)：8.5A
Gate to Source Voltage (Vgs)：20V
Drain Current-Max (Abs) (ID)：6.9A
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：87A
Avalanche Energy Rating (Eas)：35.6 mJ
RoHS Status：RoHS Compliant
Lead Free：Lead Free

在庫數 6000

小計金額 $0.00000

類似スペック製品

NTD4815NHT4G ON Semiconductor
見積かごへ在庫數 6000
NTD23N03RT4 ON Semiconductor
見積かごへ在庫數 12500
NTD70N03R ON Semiconductor
見積かごへ在庫數 90000
NTD50N03RT4G ON Semiconductor
見積かごへ在庫數 88168

Phone

NTD4815NHT4G