NTLGF3402PT2G

ON Semiconductor
Transistors - FETs, MOSFETs - Single
6-VDFN Exposed Pad
MOSFET P-CH 20V 2.3A 6-DFN
Date Sheet

在庫數 998

1+： $0.57781
10+： $0.54510
100+： $0.51425
500+： $0.48514
1000+： $0.45768

小計金額 $0.57781

仕様よくある質問

Factory Lead Time：4 Weeks
Mounting Type：Surface Mount
Package / Case：6-VDFN Exposed Pad
Surface Mount：YES
Number of Pins：6
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.3A Ta
Drive Voltage (Max Rds On, Min Rds On)：2.5V 4.5V
Number of Elements：1
Power Dissipation (Max)：1.14W Ta
Turn Off Delay Time：25 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：FETKY™
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：LIFETIME (Last Updated: 2 weeks ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Voltage - Rated DC：-20V
Terminal Position：DUAL
Terminal Form：C BEND
Peak Reflow Temperature (Cel)：260
Current Rating：-3.9A
Time@Peak Reflow Temperature-Max (s)：40
JESD-30 Code：R-XDSO-C8
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Turn On Delay Time：6.2 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：140m Ω @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
Rise Time：22ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±12V
Fall Time (Typ)：22 ns
Continuous Drain Current (ID)：3.9A
Gate to Source Voltage (Vgs)：12V
Drain Current-Max (Abs) (ID)：2.3A
Drain-source On Resistance-Max：0.14Ohm
Drain to Source Breakdown Voltage：-20V
Pulsed Drain Current-Max (IDM)：11A
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 998

1+： $0.57781
10+： $0.54510
100+： $0.51425
500+： $0.48514
1000+： $0.45768

小計金額 $0.57781

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NTLGF3402PT2G