FDMC7672S

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-PowerWDFN
FAIRCHILD SEMICONDUCTOR FDMC7672S MOSFET Transistor, N Channel, 18 A, 30 V, 0.005 ohm, 10 V, 1.6 V
Date Sheet

在庫數 169

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：23 Weeks
Contact Plating：Gold
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Number of Pins：8
Weight：200mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：14.8A Ta 18A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.3W Ta 36W Tc
Turn Off Delay Time：26 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®, SyncFET™
Published：2010
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：5
ECCN Code：EAR99
Additional Feature：ULTRA-LOW RESISTANCE
Terminal Position：DUAL
JESD-30 Code：S-PDSO-N5
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：36W
Case Connection：DRAIN
Turn On Delay Time：11 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：6m Ω @ 14.8A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：2520pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：42nC @ 10V
Rise Time：4ns
Vgs (Max)：±20V
Fall Time (Typ)：3 ns
Continuous Drain Current (ID)：18A
Threshold Voltage：1.6V
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.006Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：45A
Avalanche Energy Rating (Eas)：60 mJ
Nominal Vgs：1.6 V
Height：750μm
Length：3.3mm
Width：3.3mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 169

小計金額 $0.00000

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FDMC7672S