FDD6670A

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 30V 15A DPAK
Date Sheet

在庫數 547

1+： $1.98980
10+： $1.87717
100+： $1.77092
500+： $1.67068
1000+： $1.57611

小計金額 $1.98980

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Weight：260.37mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：15A Ta 66A Tc
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：3.2W Ta 63W Tc
Turn Off Delay Time：29 ns
Operating Temperature：-55°C~175°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：8MOhm
Additional Feature：FAST SWITCHING
Voltage - Rated DC：30V
Terminal Form：GULL WING
Current Rating：66A
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
Case Connection：DRAIN
Turn On Delay Time：11 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：1755pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：22nC @ 5V
Rise Time：12ns
Vgs (Max)：±20V
Fall Time (Typ)：19 ns
Continuous Drain Current (ID)：66A
Threshold Voltage：1.8V
Gate to Source Voltage (Vgs)：20V
Drain to Source Breakdown Voltage：30V
Dual Supply Voltage：30V
Avalanche Energy Rating (Eas)：67 mJ
Nominal Vgs：1.8 V
Height：2.39mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Contains Lead

在庫數 547

1+： $1.98980
10+： $1.87717
100+： $1.77092
500+： $1.67068
1000+： $1.57611

小計金額 $1.98980

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FDD6670A