FDS6679AZ

ON Semiconductor
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET P-CH 30V 13A 8-SOIC
Date Sheet

在庫數 47500

1+： $1.20758
10+： $1.13922
100+： $1.07474
500+： $1.01391
1000+： $0.95651

小計金額 $1.20758

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 1 day ago)
Factory Lead Time：18 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Weight：130mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：13A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：2.5W Ta
Turn Off Delay Time：210 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2008
JESD-609 Code：e4
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Resistance：9.3MOhm
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：-30V
Terminal Position：DUAL
Terminal Form：GULL WING
Current Rating：-13A
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：13 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：9.3m Ω @ 13A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：3845pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：96nC @ 10V
Rise Time：15ns
Drain to Source Voltage (Vdss)：30V
Vgs (Max)：±25V
Fall Time (Typ)：92 ns
Continuous Drain Current (ID)：-13A
Threshold Voltage：-1.9V
Gate to Source Voltage (Vgs)：25V
Drain to Source Breakdown Voltage：-30V
Nominal Vgs：-1.9 V
Feedback Cap-Max (Crss)：745 pF
Height：1.5mm
Length：5mm
Width：4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 47500

1+： $1.20758
10+： $1.13922
100+： $1.07474
500+： $1.01391
1000+： $0.95651

小計金額 $1.20758

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FDS6679AZ