FDC658AP

ON Semiconductor
Transistors - FETs, MOSFETs - Single
SOT-23-6 Thin, TSOT-23-6
In a Pack of 5, P-Channel MOSFET, 4 A, 30 V, 6-Pin SOT-23 ON Semiconductor FDC658AP
Date Sheet

在庫數 30000

1+： $0.76605
10+： $0.72268
100+： $0.68178
500+： $0.64319
1000+： $0.60678

小計金額 $0.76605

仕様よくある質問

Factory Lead Time：10 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Number of Pins：6
Weight：36mg
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4A Ta
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Power Dissipation (Max)：1.6W Ta
Turn Off Delay Time：16 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：3V @ 250μA
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：PowerTrench®
Published：2017
JESD-609 Code：e3
Pbfree Code：yes
Part Status：ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：6
Termination：SMD/SMT
ECCN Code：EAR99
Resistance：50MOhm
Terminal Position：DUAL
Terminal Form：GULL WING
JESD-30 Code：R-PDSO-G3
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.6W
Turn On Delay Time：7 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：50m Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds：470pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：8.1nC @ 5V
Rise Time：12ns
Drain to Source Voltage (Vdss)：30V
Vgs (Max)：±25V
Fall Time (Typ)：12 ns
Continuous Drain Current (ID)：4mA
Threshold Voltage：-1.8V
Gate to Source Voltage (Vgs)：25V
Drain Current-Max (Abs) (ID)：4A
Drain to Source Breakdown Voltage：-30V
Dual Supply Voltage：-30V
Max Junction Temperature (Tj)：150°C
Nominal Vgs：-1.8 V
Feedback Cap-Max (Crss)：90 pF
Height：900μm
Length：3mm
Width：1.7mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 30000

1+： $0.76605
10+： $0.72268
100+： $0.68178
500+： $0.64319
1000+： $0.60678

小計金額 $0.76605

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FDC658AP